auf Bestellung 434 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.67 EUR |
| 10+ | 1.37 EUR |
| 100+ | 1.12 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.78 EUR |
| 1500+ | 0.67 EUR |
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Technische Details IPS80R1K4P7AKMA1 Infineon Technologies
Description: MOSFET N-CH 800V 4A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 700µA, Supplier Device Package: PG-TO251-3-11, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V.
Weitere Produktangebote IPS80R1K4P7AKMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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IPS80R1K4P7AKMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-251 Tube |
Produkt ist nicht verfügbar |
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IPS80R1K4P7AKMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 800V 4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 700µA Supplier Device Package: PG-TO251-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V |
Produkt ist nicht verfügbar |