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IPSA70R950CEAKMA1

IPSA70R950CEAKMA1 Infineon Technologies

Infineon-IPSA70R950CE-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c98e8554f2 Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 8.7A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3-347
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
auf Bestellung 34000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
959+0.5 EUR
Mindestbestellmenge: 959
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Technische Details IPSA70R950CEAKMA1 Infineon Technologies

Description: MOSFET N-CH 700V 8.7A TO251-3, Packaging: Bulk, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 150µA, Supplier Device Package: PG-TO251-3-347, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V.

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IPSA70R950CEAKMA1 Hersteller : Infineon Technologies Infineon-IPSA70R950CE-DS-v02_00-EN-1509361.pdf MOSFET CONSUMER
auf Bestellung 1480 Stücke:
Lieferzeit 10-14 Tag (e)
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IPSA70R950CEAKMA1 Hersteller : ROCHESTER ELECTRONICS Infineon-IPSA70R950CE-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c98e8554f2 Description: ROCHESTER ELECTRONICS - IPSA70R950CEAKMA1 - IPSA70R950 650V AND 700V COOLMOS N-CHAN
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 1779 Stücke:
Lieferzeit 14-21 Tag (e)
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IPSA70R950CEAKMA1 IPSA70R950CEAKMA1 Hersteller : Infineon Technologies Infineon-IPSA70R950CE-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c98e8554f2 Description: MOSFET N-CH 700V 8.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3-347
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
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Im Einkaufswagen  Stück im Wert von  UAH