auf Bestellung 1976 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.26 EUR |
| 10+ | 7.81 EUR |
| 100+ | 5.81 EUR |
| 500+ | 5.51 EUR |
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Technische Details IPT009N06NM5ATMA1 Infineon Technologies
Description: TRENCH 40.
Weitere Produktangebote IPT009N06NM5ATMA1 nach Preis ab 5.34 EUR bis 11.58 EUR
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IPT009N06NM5ATMA1 | Hersteller : Infineon Technologies |
 Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 427A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 220µA Supplier Device Package: PG-HSOF-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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IPT009N06NM5ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 427A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 220µA Supplier Device Package: PG-HSOF-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V |
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