| Anzahl | Preis |
|---|---|
| 1+ | 7.88 EUR |
| 10+ | 5.24 EUR |
| 100+ | 3.73 EUR |
| 500+ | 3.29 EUR |
| 2000+ | 3.08 EUR |
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Technische Details IPT012N06NATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 240A 8HSOF, Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PG-HSOF-8-1, Vgs(th) (Max) @ Id: 3.3V @ 143µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPT012N06NATMA1 nach Preis ab 4.66 EUR bis 11.12 EUR
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IPT012N06NATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 60V 240A 8HSOFInput Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-HSOF-8-1 Vgs(th) (Max) @ Id: 3.3V @ 143µA Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 1330 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPT012N06NATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 240A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.3V @ 143µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 240A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.3V @ 143µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.12 EUR |
| 10+ | 7.5 EUR |
| 100+ | 5.45 EUR |
| 500+ | 4.66 EUR |