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IPT014N08NM5ATMA1

IPT014N08NM5ATMA1 Infineon Technologies

Infineon-IPT014N08NM5-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c320177b7718ecc5c69 Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 37A/331A HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V
auf Bestellung 2209 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.08 EUR
10+ 8.47 EUR
100+ 6.85 EUR
500+ 6.09 EUR
1000+ 5.22 EUR
Mindestbestellmenge: 2
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Technische Details IPT014N08NM5ATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 37A/331A HSOF-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 280µA, Supplier Device Package: PG-HSOF-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V.

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IPT014N08NM5ATMA1 IPT014N08NM5ATMA1 Hersteller : Infineon Technologies Infineon_IPT014N08NM5_DataSheet_v01_00_EN-2237799.pdf MOSFET TRENCH 40<-<100V
auf Bestellung 5978 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.17 EUR
10+ 8.54 EUR
25+ 8.29 EUR
100+ 6.9 EUR
250+ 6.69 EUR
500+ 6.14 EUR
1000+ 5.26 EUR
IPT014N08NM5ATMA1 IPT014N08NM5ATMA1 Hersteller : Infineon Technologies infineon-ipt014n08nm5-datasheet-v01_00-en.pdf Trans MOSFET N-CH 80V 37A 9-Pin(8+Tab) HSOF T/R
Produkt ist nicht verfügbar
IPT014N08NM5ATMA1 IPT014N08NM5ATMA1 Hersteller : Infineon Technologies Infineon-IPT014N08NM5-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c320177b7718ecc5c69 Description: MOSFET N-CH 80V 37A/331A HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V
Produkt ist nicht verfügbar