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IPT017N10NM5LF2ATMA1

IPT017N10NM5LF2ATMA1 Infineon Technologies

IPT017N10NM5LF2ATMA1.pdf Hersteller: Infineon Technologies
Description: IPT017N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+5.80 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPT017N10NM5LF2ATMA1 Infineon Technologies

Description: IPT017N10NM5LF2ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V, Power Dissipation (Max): 3.8W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 280µA, Supplier Device Package: PG-HSOF-8-1, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V.

Weitere Produktangebote IPT017N10NM5LF2ATMA1 nach Preis ab 5.60 EUR bis 13.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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IPT017N10NM5LF2ATMA1 IPT017N10NM5LF2ATMA1 Hersteller : Infineon Technologies Infineon_09_04_2024_DS_IPT017N10NM5LF2_1_0_final-3500649.pdf MOSFETs TRENCH >=100V
auf Bestellung 1395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.30 EUR
10+8.80 EUR
25+7.94 EUR
100+7.02 EUR
250+6.60 EUR
2000+5.60 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPT017N10NM5LF2ATMA1 IPT017N10NM5LF2ATMA1 Hersteller : Infineon Technologies IPT017N10NM5LF2ATMA1.pdf Description: IPT017N10NM5LF2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.45 EUR
10+9.13 EUR
100+6.70 EUR
500+5.76 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH