IPT017N10NM5LF2ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IPT017N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 3.74 EUR |
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Technische Details IPT017N10NM5LF2ATMA1 Infineon Technologies
Description: IPT017N10NM5LF2ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V, Power Dissipation (Max): 3.8W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 280µA, Supplier Device Package: PG-HSOF-8-1, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V.
Weitere Produktangebote IPT017N10NM5LF2ATMA1 nach Preis ab 4.58 EUR bis 10.23 EUR
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IPT017N10NM5LF2ATMA1 | Hersteller : Infineon Technologies |
Description: IPT017N10NM5LF2ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 280µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V |
auf Bestellung 3602 Stücke: Lieferzeit 10-14 Tag (e) |
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IPT017N10NM5LF2ATMA1 | Hersteller : Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 6490 Stücke: Lieferzeit 10-14 Tag (e) |
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