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IPT017N12NM6ATMA1

IPT017N12NM6ATMA1 Infineon Technologies

Infineon_IPT017N12NM6_DataSheet_v02_00_EN-3084678.pdf Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
auf Bestellung 4794 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.89 EUR
10+6.95 EUR
100+5.21 EUR
500+4.96 EUR
2000+4.14 EUR
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Technische Details IPT017N12NM6ATMA1 Infineon Technologies

Description: OPTIMOS 6 POWER-TRANSISTOR,120V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V, Power Dissipation (Max): 3W (Ta), 395W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 275µA, Supplier Device Package: PG-HSOF-8, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V.

Weitere Produktangebote IPT017N12NM6ATMA1 nach Preis ab 5.47 EUR bis 9.94 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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IPT017N12NM6ATMA1 IPT017N12NM6ATMA1 Hersteller : Infineon Technologies Infineon-IPT017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a93a6538c Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.94 EUR
10+6.66 EUR
100+5.47 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPT017N12NM6ATMA1 Hersteller : Infineon Technologies infineon-ipt017n12nm6-datasheet-v02_00-en.pdf Trans MOSFET N-CH 120V 29A 9-Pin(8+Tab) HSOF T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT017N12NM6ATMA1 IPT017N12NM6ATMA1 Hersteller : Infineon Technologies Infineon-IPT017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a93a6538c Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH