auf Bestellung 6958 Stücke:
Lieferzeit 150-154 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 10.42 EUR |
| 10+ | 8.94 EUR |
| 25+ | 8.1 EUR |
| 100+ | 7.44 EUR |
| 250+ | 7 EUR |
| 500+ | 6.56 EUR |
| 1000+ | 6.23 EUR |
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Technische Details IPT017N12NM6ATMA1 Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V, Power Dissipation (Max): 3W (Ta), 395W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 275µA, Supplier Device Package: PG-HSOF-8, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V.
Weitere Produktangebote IPT017N12NM6ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| IPT017N12NM6ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 120V 29A 9-Pin(8+Tab) HSOF T/R |
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IPT017N12NM6ATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V Power Dissipation (Max): 3W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 275µA Supplier Device Package: PG-HSOF-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V |
Produkt ist nicht verfügbar |
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IPT017N12NM6ATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V Power Dissipation (Max): 3W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 275µA Supplier Device Package: PG-HSOF-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V |
Produkt ist nicht verfügbar |