auf Bestellung 2661 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.34 EUR |
10+ | 11.14 EUR |
100+ | 9.24 EUR |
500+ | 8.04 EUR |
1000+ | 7 EUR |
2000+ | 6.74 EUR |
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Produktbewertung abgeben
Technische Details IPT044N15N5ATMA1 Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 174A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 221µA, Supplier Device Package: PG-HSOF-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V.
Weitere Produktangebote IPT044N15N5ATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPT044N15N5ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPT044N15N5ATMA1 - Leistungs-MOSFET, n-Kanal, 150 V, 174 A, 0.0038 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 174A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 300W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0038ohm |
auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT044N15N5ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPT044N15N5ATMA1 - Leistungs-MOSFET, n-Kanal, 150 V, 174 A, 0.0038 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 174A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 300W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0038ohm |
auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT044N15N5ATMA1 | Hersteller : Infineon Technologies | N Channel Power Mosfet |
Produkt ist nicht verfügbar |
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IPT044N15N5ATMA1 | Hersteller : Infineon Technologies | SP005537524 |
Produkt ist nicht verfügbar |
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IPT044N15N5ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V PG-HSOF-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 221µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V |
Produkt ist nicht verfügbar |
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IPT044N15N5ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V PG-HSOF-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 221µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V |
Produkt ist nicht verfügbar |