| Anzahl | Preis |
|---|---|
| 1+ | 7.18 EUR |
| 10+ | 5.83 EUR |
| 100+ | 4.61 EUR |
| 500+ | 4.35 EUR |
| 1000+ | 3.73 EUR |
| 2000+ | 3.57 EUR |
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Technische Details IPT059N15N3ATMA1 Infineon Technologies
Description: MOSFET N-CH 150V 155A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 155A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 150A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-HSOF-8-1, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 75 V.
Weitere Produktangebote IPT059N15N3ATMA1 nach Preis ab 3.96 EUR bis 9.06 EUR
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IPT059N15N3ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 150V 155A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 155A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 150A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 75 V |
auf Bestellung 1228 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPT059N15N3ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 155A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 155A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 75 V
Description: MOSFET N-CH 150V 155A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 155A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 75 V
auf Bestellung 1228 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.06 EUR |
| 10+ | 6.05 EUR |
| 100+ | 4.35 EUR |
| 500+ | 3.96 EUR |