Produkte > INFINEON TECHNOLOGIES > IPT067N20NM6ATMA1
IPT067N20NM6ATMA1

IPT067N20NM6ATMA1 Infineon Technologies

Infineon-IPT067N20NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d328272a20f15 Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.46 EUR
10+8.46 EUR
100+6.93 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IPT067N20NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V, Power Dissipation (Max): 3.8W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 251µA, Supplier Device Package: PG-HSOF-8-1, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V.

Weitere Produktangebote IPT067N20NM6ATMA1 nach Preis ab 6.12 EUR bis 13.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPT067N20NM6ATMA1 IPT067N20NM6ATMA1 Hersteller : Infineon Technologies Infineon_IPT067N20NM6_DataSheet_v02_01_EN-3398083.pdf MOSFETs TRENCH >=100V
auf Bestellung 3853 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.27 EUR
10+9.05 EUR
100+7.67 EUR
250+7.66 EUR
500+7.55 EUR
4000+6.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPT067N20NM6ATMA1 IPT067N20NM6ATMA1 Hersteller : Infineon Technologies infineon-ipt067n20nm6-datasheet-v02_01-en.pdf Trans MOSFET N-CH 200V 15.3A 9-Pin(8+Tab) HSOF T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT067N20NM6ATMA1 IPT067N20NM6ATMA1 Hersteller : Infineon Technologies Infineon-IPT067N20NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d328272a20f15 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH