IPT067N20NM6ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 5.91 EUR |
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Technische Details IPT067N20NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V, Power Dissipation (Max): 3.8W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 251µA, Supplier Device Package: PG-HSOF-8-1, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V.
Weitere Produktangebote IPT067N20NM6ATMA1 nach Preis ab 4.33 EUR bis 11.3 EUR
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IPT067N20NM6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 15.3A 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 34000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT067N20NM6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 15.3A 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 1950 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT067N20NM6ATMA1 | Hersteller : Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 1115 Stücke: Lieferzeit 10-14 Tag (e) |
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IPT067N20NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 251µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V |
auf Bestellung 9137 Stücke: Lieferzeit 10-14 Tag (e) |
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IPT067N20NM6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 15.3A 9-Pin(8+Tab) HSOF T/R |
Produkt ist nicht verfügbar |
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IPT067N20NM6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 15.3A 9-Pin(8+Tab) HSOF T/R |
Produkt ist nicht verfügbar |
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IPT067N20NM6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 15.3A 9-Pin(8+Tab) HSOF T/R |
Produkt ist nicht verfügbar |
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| IPT067N20NM6ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 137A; Idm: 548A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 200V Drain current: 137A Pulsed drain current: 548A Power dissipation: 300W Case: TOLL Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |