IPT111N20NFDATMA1 Infineon Technologies

Description: MOSFET N-CH 200V 96A 8HSOF, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-HSOF-8-1, Vgs(th) (Max) @ Id: 4V @ 267µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).