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IPT129N20NM6ATMA1

IPT129N20NM6ATMA1 Infineon Technologies

Infineon-IPT129N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286e90d0f26 Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
auf Bestellung 1096 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.69 EUR
10+7.92 EUR
100+5.78 EUR
500+5.04 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPT129N20NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V, Power Dissipation (Max): 3.8W (Ta), 234W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 129µA, Supplier Device Package: PG-HSOF-8-1, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V.

Weitere Produktangebote IPT129N20NM6ATMA1 nach Preis ab 5.4 EUR bis 12.16 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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IPT129N20NM6ATMA1 IPT129N20NM6ATMA1 Hersteller : Infineon Technologies Infineon_IPT129N20NM6_DataSheet_v02_00_EN-3398064.pdf MOSFETs TRENCH >=100V
auf Bestellung 1876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.16 EUR
10+8.24 EUR
100+6.16 EUR
500+5.72 EUR
2000+5.4 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPT129N20NM6ATMA1 Hersteller : Infineon Technologies infineon-ipt129n20nm6-datasheet-v02_00-en.pdf TRENCH >=100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT129N20NM6ATMA1 IPT129N20NM6ATMA1 Hersteller : Infineon Technologies Infineon-IPT129N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286e90d0f26 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH