IPT129N20NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Supplier Device Package: PG-HSOF-8-1, Vgs(th) (Max) @ Id: 4.5V @ 129µA, Power Dissipation (Max): 3.8W (Ta), 234W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).