IPT60R022S7XTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 600V 23A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
auf Bestellung 1034 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 27.66 EUR |
| 10+ | 24.36 EUR |
| 100+ | 21.06 EUR |
| 500+ | 19.09 EUR |
| 1000+ | 17.51 EUR |
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Technische Details IPT60R022S7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 23A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.44mA, Supplier Device Package: PG-HSOF-8-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V.
Weitere Produktangebote IPT60R022S7XTMA1 nach Preis ab 19.03 EUR bis 27.82 EUR
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IPT60R022S7XTMA1 | Hersteller : Infineon Technologies |
MOSFET HIGH POWER_NEW |
auf Bestellung 2696 Stücke: Lieferzeit 14-28 Tag (e) |
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IPT60R022S7XTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 23A 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPT60R022S7XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A Mounting: SMD Pulsed drain current: 375A Power dissipation: 390W Gate charge: 31nC Polarisation: unipolar Technology: CoolMOS™ S7 Drain current: 23A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel Case: PG-HSOF-8 On-state resistance: 22mΩ Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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IPT60R022S7XTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 23A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.44mA Supplier Device Package: PG-HSOF-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V |
Produkt ist nicht verfügbar |
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| IPT60R022S7XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A Mounting: SMD Pulsed drain current: 375A Power dissipation: 390W Gate charge: 31nC Polarisation: unipolar Technology: CoolMOS™ S7 Drain current: 23A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel Case: PG-HSOF-8 On-state resistance: 22mΩ |
Produkt ist nicht verfügbar |