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IPT60R045CFD7XTMA1

IPT60R045CFD7XTMA1 Infineon Technologies

Infineon-IPT60R045CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a61cc30ec Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 52A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+7.29 EUR
Mindestbestellmenge: 2000
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Technische Details IPT60R045CFD7XTMA1 Infineon Technologies

Description: MOSFET N-CH 600V 52A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 900µA, Supplier Device Package: PG-HSOF-8-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V.

Weitere Produktangebote IPT60R045CFD7XTMA1 nach Preis ab 7.71 EUR bis 13.71 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPT60R045CFD7XTMA1 IPT60R045CFD7XTMA1 Hersteller : Infineon Technologies Infineon_IPT60R045CFD7_DataSheet_v02_03_EN-3362864.pdf MOSFET HIGH POWER_NEW
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+13.62 EUR
10+ 11.67 EUR
25+ 10.6 EUR
100+ 9.72 EUR
250+ 9.17 EUR
500+ 8.57 EUR
1000+ 7.71 EUR
IPT60R045CFD7XTMA1 IPT60R045CFD7XTMA1 Hersteller : Infineon Technologies Infineon-IPT60R045CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a61cc30ec Description: MOSFET N-CH 600V 52A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.71 EUR
10+ 11.75 EUR
100+ 9.79 EUR
500+ 8.64 EUR
1000+ 7.78 EUR
Mindestbestellmenge: 2
IPT60R045CFD7XTMA1 Hersteller : Infineon Technologies infineon-ipt60r045cfd7-datasheet-v02_03-en.pdf SP005346345
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