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IPT60R105CFD7XTMA1

IPT60R105CFD7XTMA1 Infineon Technologies

Infineon-IPT60R105CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a7e5530ef Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 24A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
auf Bestellung 335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.09 EUR
10+4.55 EUR
100+3.31 EUR
Mindestbestellmenge: 3
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Technische Details IPT60R105CFD7XTMA1 Infineon Technologies

Description: MOSFET N-CH 600V 24A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 390µA, Supplier Device Package: PG-HSOF-8-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V.

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IPT60R105CFD7XTMA1 IPT60R105CFD7XTMA1 Hersteller : Infineon Technologies Infineon_IPT60R105CFD7_DataSheet_v02_03_EN-3362802.pdf MOSFETs HIGH POWER_NEW
auf Bestellung 1874 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.44 EUR
10+4.82 EUR
100+3.57 EUR
250+3.56 EUR
500+2.92 EUR
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IPT60R105CFD7XTMA1 IPT60R105CFD7XTMA1 Hersteller : Infineon Technologies infineon-ipt60r105cfd7-datasheet-v02_03-en.pdf Trans MOSFET N-CH 600V 24A 9-Pin(8+Tab) HSOF T/R
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IPT60R105CFD7XTMA1 IPT60R105CFD7XTMA1 Hersteller : Infineon Technologies Infineon-IPT60R105CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a7e5530ef Description: MOSFET N-CH 600V 24A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH