IPT60R120CM8XTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IPT60R120CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 200µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 1.64 EUR |
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Technische Details IPT60R120CM8XTMA1 Infineon Technologies
Description: IPT60R120CM8XTMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V, Power Dissipation (Max): 154W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 200µA, Supplier Device Package: PG-HSOF-8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V.
Weitere Produktangebote IPT60R120CM8XTMA1 nach Preis ab 1.76 EUR bis 5.19 EUR
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IPT60R120CM8XTMA1 | Hersteller : Infineon Technologies |
Description: IPT60R120CM8XTMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 200µA Supplier Device Package: PG-HSOF-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPT60R120CM8XTMA1 | Hersteller : Infineon Technologies |
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