Produkte > INFINEON TECHNOLOGIES > IPT60R180CM8XTMA1
IPT60R180CM8XTMA1

IPT60R180CM8XTMA1 Infineon Technologies


Hersteller: Infineon Technologies
Description: IPT60R180CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
auf Bestellung 1807 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.68 EUR
100+2.18 EUR
500+1.86 EUR
1000+1.83 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IPT60R180CM8XTMA1 Infineon Technologies

Description: IPT60R180CM8XTMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tj), Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V, Power Dissipation (Max): 119W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 140µA, Supplier Device Package: PG-HSOF-8-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V.

Weitere Produktangebote IPT60R180CM8XTMA1 nach Preis ab 1.67 EUR bis 3.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPT60R180CM8XTMA1 IPT60R180CM8XTMA1 Hersteller : Infineon Technologies Infineon_IPT60R180CM8_DataSheet_v02_01_EN-3445913.pdf SiC MOSFETs HIGH POWER_NEW
auf Bestellung 1608 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.48 EUR
10+2.71 EUR
100+2.29 EUR
250+2.11 EUR
500+2.02 EUR
1000+1.97 EUR
2000+1.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPT60R180CM8XTMA1 IPT60R180CM8XTMA1 Hersteller : Infineon Technologies Description: IPT60R180CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH