
IPT60T040S7XTMA1 Infineon Technologies

Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tj)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 780µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 300 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 10.67 EUR |
10+ | 7.57 EUR |
100+ | 5.73 EUR |
500+ | 5.53 EUR |
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Technische Details IPT60T040S7XTMA1 Infineon Technologies
Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tj), Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 780µA, Supplier Device Package: PG-HSOF-8-2, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 300 V.
Weitere Produktangebote IPT60T040S7XTMA1 nach Preis ab 8.08 EUR bis 14.27 EUR
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IPT60T040S7XTMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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IPT60T040S7XTMA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IPT60T040S7XTMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tj) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 780µA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 300 V |
Produkt ist nicht verfügbar |