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IPT60T040S7XTMA1

IPT60T040S7XTMA1 Infineon Technologies


Infineon-IPT60T040S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c4745b27ae8 Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tj)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 780µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 300 V
auf Bestellung 1998 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.67 EUR
10+7.57 EUR
100+5.73 EUR
500+5.53 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPT60T040S7XTMA1 Infineon Technologies

Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tj), Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 780µA, Supplier Device Package: PG-HSOF-8-2, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 300 V.

Weitere Produktangebote IPT60T040S7XTMA1 nach Preis ab 8.08 EUR bis 14.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPT60T040S7XTMA1 Hersteller : Infineon Technologies Infineon_IPT60T040S7_DataSheet_v02_01_EN-3369337.pdf MOSFET HIGH POWER_NEW
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.27 EUR
10+12.23 EUR
25+11.09 EUR
100+10.17 EUR
250+9.59 EUR
500+8.99 EUR
1000+8.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPT60T040S7XTMA1 Hersteller : Infineon Technologies infineon-ipt60t040s7-datasheet-v02_01-en.pdf HIGH POWER_NEW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT60T040S7XTMA1 IPT60T040S7XTMA1 Hersteller : Infineon Technologies Infineon-IPT60T040S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c4745b27ae8 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tj)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 780µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH