| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.89 EUR |
| 10+ | 8.04 EUR |
| 25+ | 7.58 EUR |
| 100+ | 5.93 EUR |
| 250+ | 5.9 EUR |
| 500+ | 4.99 EUR |
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Technische Details IPT60T065S7XTMA1 Infineon Technologies
Description: HIGH POWER_NEW, Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 12V, Supplier Device Package: PG-HSOF-8-2, Vgs(th) (Max) @ Id: 4.5V @ 470µA, Power Dissipation (Max): 167W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPT60T065S7XTMA1 nach Preis ab 4.78 EUR bis 11.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IPT60T065S7XTMA1 | Infineon Technologies |
 Description: HIGH POWER_NEWInput Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: PG-HSOF-8-2 Vgs(th) (Max) @ Id: 4.5V @ 470µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 1930 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPT60T065S7XTMA1 |
|
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.85 EUR |
| 10+ | 7.94 EUR |
| 100+ | 5.72 EUR |
| 500+ | 4.78 EUR |