Produkte > INFINEON TECHNOLOGIES > IPT60T065S7XTMA1
IPT60T065S7XTMA1

IPT60T065S7XTMA1 Infineon Technologies


Infineon_IPT60T065S7_DataSheet_v02_01_EN-3369249.pdf Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
auf Bestellung 228 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.15 EUR
10+6.76 EUR
25+6.37 EUR
100+4.98 EUR
250+4.96 EUR
500+4.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IPT60T065S7XTMA1 Infineon Technologies

Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 470µA, Supplier Device Package: PG-HSOF-8-2, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V.

Weitere Produktangebote IPT60T065S7XTMA1 nach Preis ab 4.02 EUR bis 9.96 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPT60T065S7XTMA1 IPT60T065S7XTMA1 Hersteller : Infineon Technologies Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.96 EUR
10+6.67 EUR
100+4.81 EUR
500+4.02 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPT60T065S7XTMA1 Hersteller : Infineon Technologies Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee HIGH POWER_NEW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT60T065S7XTMA1 IPT60T065S7XTMA1 Hersteller : Infineon Technologies Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH