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IPT65R018CM8XTMA1

IPT65R018CM8XTMA1 Infineon Technologies


Infineon_03-25-2025_DS_IPT65R018CM8_2_0.pdf Hersteller: Infineon Technologies
MOSFETs 650V CoolMOS CM8 Power Transistor
auf Bestellung 1737 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.51 EUR
10+13.69 EUR
100+11.4 EUR
500+10.17 EUR
1000+8.64 EUR
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Technische Details IPT65R018CM8XTMA1 Infineon Technologies

Description: IPT65R018CM8XTMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 134A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 1.48mA, Supplier Device Package: PG-HSOF-8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V.

Weitere Produktangebote IPT65R018CM8XTMA1 nach Preis ab 11.33 EUR bis 20.7 EUR

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IPT65R018CM8XTMA1 IPT65R018CM8XTMA1 Hersteller : Infineon Technologies Infineon-IPT65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e7adc80aaf Description: IPT65R018CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
auf Bestellung 1485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.7 EUR
10+14.42 EUR
100+11.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPT65R018CM8XTMA1 IPT65R018CM8XTMA1 Hersteller : Infineon Technologies Infineon-IPT65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e7adc80aaf Description: IPT65R018CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
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Im Einkaufswagen  Stück im Wert von  UAH