IPT65R105G7XTMA1 Infineon Technologies

Description: MOSFET N-CH 650V 24A 8HSOF, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-HSOF-8-2, Vgs(th) (Max) @ Id: 4V @ 440µA, Power Dissipation (Max): 156W (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 8.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).