auf Bestellung 3559 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 11.35 EUR |
| 10+ | 9.82 EUR |
| 25+ | 9.7 EUR |
| 100+ | 8.27 EUR |
| 250+ | 8.25 EUR |
| 500+ | 7.37 EUR |
| 3600+ | 6.69 EUR |
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Technische Details IPTC015N10NM5ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 35A/354A HDSOP, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 354A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V, Power Dissipation (Max): 3.8W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 275µA, Supplier Device Package: PG-HDSOP-16-2, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V.
Weitere Produktangebote IPTC015N10NM5ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IPTC015N10NM5ATMA1 | Hersteller : INFINEON |
 Description: INFINEON - IPTC015N10NM5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 354 A, 0.0013 ohm, HDSOP, OberflächenmontagetariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 354A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: -888 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 16Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0013ohm |
auf Bestellung 1530 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPTC015N10NM5ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPTC015N10NM5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 354 A, 0.0013 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 354A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: -888 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 16Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0013ohm |
auf Bestellung 1530 Stücke: Lieferzeit 14-21 Tag (e) |
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IPTC015N10NM5ATMA1 | Hersteller : Infineon Technologies |
MOSFET Power Transistor |
Produkt ist nicht verfügbar |
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IPTC015N10NM5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 35A/354A HDSOP Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 354A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V |
Produkt ist nicht verfügbar |
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IPTC015N10NM5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 35A/354A HDSOP Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 354A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V |
Produkt ist nicht verfügbar |