auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.47 EUR |
| 10+ | 7.23 EUR |
| 100+ | 5.88 EUR |
| 500+ | 5.81 EUR |
| 1000+ | 5.77 EUR |
| 1800+ | 5.12 EUR |
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Technische Details IPTC026N12NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V, Power Dissipation (Max): 3.8W (Ta), 278W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 169µA, Supplier Device Package: PG-HDSOP-16-2, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V.
Weitere Produktangebote IPTC026N12NM6ATMA1 nach Preis ab 5.12 EUR bis 10.58 EUR
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IPTC026N12NM6ATMA1 | Hersteller : Infineon Technologies |
 Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V Power Dissipation (Max): 3.8W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 169µA Supplier Device Package: PG-HDSOP-16-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V |
auf Bestellung 552 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPTC026N12NM6ATMA1 | Hersteller : Infineon Technologies |
N-Channel MOSFET |
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IPTC026N12NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V Power Dissipation (Max): 3.8W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 169µA Supplier Device Package: PG-HDSOP-16-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V |
Produkt ist nicht verfügbar |