IPTC068N20NM6ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IPTC068N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HDSOP-16-U04
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
Produktrezensionen
Produktbewertung abgeben
Technische Details IPTC068N20NM6ATMA1 Infineon Technologies
Description: IPTC068N20NM6ATMA1, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc), Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V, Power Dissipation (Max): 3.8W (Ta), 319W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 251µA, Supplier Device Package: PG-HDSOP-16-U04, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V.
Weitere Produktangebote IPTC068N20NM6ATMA1 nach Preis ab 6.3 EUR bis 15.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPTC068N20NM6ATMA1 | Infineon Technologies |
MOSFETs OptiMOS 6 Power-Transistor, 200 V |
auf Bestellung 3254 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
IPTC068N20NM6ATMA1 | Infineon Technologies |
Description: IPTC068N20NM6ATMA1 Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 251µA Supplier Device Package: PG-HDSOP-16-U04 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V |
auf Bestellung 2775 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPTC068N20NM6ATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs OptiMOS 6 Power-Transistor, 200 V
MOSFETs OptiMOS 6 Power-Transistor, 200 V
auf Bestellung 3254 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.9 EUR |
| 10+ | 9.24 EUR |
| 100+ | 6.79 EUR |
| 500+ | 6.74 EUR |
| 1000+ | 6.3 EUR |
| IPTC068N20NM6ATMA1 |
|
Hersteller: Infineon Technologies
Description: IPTC068N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HDSOP-16-U04
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
Description: IPTC068N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HDSOP-16-U04
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
auf Bestellung 2775 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 15.75 EUR |
| 10+ | 10.74 EUR |
| 100+ | 7.9 EUR |
| 500+ | 6.75 EUR |