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IPTC068N20NM6ATMA1

IPTC068N20NM6ATMA1 Infineon Technologies


Infineon_04-04-2025_DS_IPTC068N20NM6_2_0.pdf Hersteller: Infineon Technologies
MOSFETs OptiMOS 6 Power-Transistor, 200 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.79 EUR
10+9.05 EUR
100+7.55 EUR
500+6.65 EUR
1000+5.72 EUR
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Technische Details IPTC068N20NM6ATMA1 Infineon Technologies

Description: IPTC068N20NM6ATMA1, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc), Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V, Power Dissipation (Max): 3.8W (Ta), 319W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 251µA, Supplier Device Package: PG-HDSOP-16-U04, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V.

Weitere Produktangebote IPTC068N20NM6ATMA1 nach Preis ab 6.71 EUR bis 12.62 EUR

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IPTC068N20NM6ATMA1 IPTC068N20NM6ATMA1 Hersteller : Infineon Technologies Infineon-IPTC068N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626da9150613e Description: IPTC068N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HDSOP-16-U04
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
auf Bestellung 1015 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.62 EUR
10+8.6 EUR
100+6.71 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPTC068N20NM6ATMA1 IPTC068N20NM6ATMA1 Hersteller : Infineon Technologies infineoniptc068n20nm6datasheetv0200en.pdf Trans MOSFET N-CH 200V 15.2A 16-Pin HDSOP EP
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IPTC068N20NM6ATMA1 IPTC068N20NM6ATMA1 Hersteller : Infineon Technologies infineoniptc068n20nm6datasheetv0200en.pdf Trans MOSFET N-CH 200V 15.2A 16-Pin HDSOP EP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPTC068N20NM6ATMA1 IPTC068N20NM6ATMA1 Hersteller : Infineon Technologies Infineon-IPTC068N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626da9150613e Description: IPTC068N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HDSOP-16-U04
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH