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IPTG018N10NM5ATMA1

IPTG018N10NM5ATMA1 Infineon Technologies


Infineon-IPTG018N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791759bc221150 Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 273A Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 202µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
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500+3.12 EUR
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Technische Details IPTG018N10NM5ATMA1 Infineon Technologies

Description: TRENCH >=100V PG-HSOG-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 273A Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V, Power Dissipation (Max): 3.8W (Ta), 273W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 202µA, Supplier Device Package: PG-HSOG-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V.

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IPTG018N10NM5ATMA1 Hersteller : Infineon Technologies infineon-iptg018n10nm5-datasheet-v02_00-en.pdf SP005575192
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPTG018N10NM5ATMA1 IPTG018N10NM5ATMA1 Hersteller : Infineon Technologies Infineon-IPTG018N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791759bc221150 Description: TRENCH >=100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 273A Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 202µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPTG018N10NM5ATMA1 IPTG018N10NM5ATMA1 Hersteller : Infineon Technologies Infineon_IPTG018N10NM5_DataSheet_v02_00_EN-3362572.pdf MOSFETs TRENCH >=100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH