Produkte > INFINEON TECHNOLOGIES > IPTG025N15NM6ATMA1
IPTG025N15NM6ATMA1

IPTG025N15NM6ATMA1 Infineon Technologies


Infineon_IPTG025N15NM6_DataSheet_v02_00_EN-3478329.pdf Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
auf Bestellung 1039 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+16.07 EUR
10+13.16 EUR
25+11.88 EUR
100+10.54 EUR
250+10.00 EUR
500+9.54 EUR
1000+9.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IPTG025N15NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V, Power Dissipation (Max): 3.8W (Ta), 395W (Tc), Vgs(th) (Max) @ Id: 4V @ 275µA, Supplier Device Package: PG-HSOG-8-1, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V.

Weitere Produktangebote IPTG025N15NM6ATMA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPTG025N15NM6ATMA1 Hersteller : Infineon Technologies Infineon-IPTG025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740e75a702d IPTG025N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPTG025N15NM6ATMA1 IPTG025N15NM6ATMA1 Hersteller : Infineon Technologies Infineon-IPTG025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740e75a702d Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPTG025N15NM6ATMA1 IPTG025N15NM6ATMA1 Hersteller : Infineon Technologies Infineon-IPTG025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740e75a702d Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH