auf Bestellung 1039 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 16.07 EUR |
| 10+ | 13.16 EUR |
| 25+ | 11.88 EUR |
| 100+ | 10.54 EUR |
| 250+ | 10.00 EUR |
| 500+ | 9.54 EUR |
| 1000+ | 9.15 EUR |
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Technische Details IPTG025N15NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V, Power Dissipation (Max): 3.8W (Ta), 395W (Tc), Vgs(th) (Max) @ Id: 4V @ 275µA, Supplier Device Package: PG-HSOG-8-1, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V.
Weitere Produktangebote IPTG025N15NM6ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IPTG025N15NM6ATMA1 | Hersteller : Infineon Technologies |
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IPTG025N15NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 4V @ 275µA Supplier Device Package: PG-HSOG-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V |
Produkt ist nicht verfügbar |
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IPTG025N15NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 4V @ 275µA Supplier Device Package: PG-HSOG-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V |
Produkt ist nicht verfügbar |