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IPTG029N13NM6ATMA1

IPTG029N13NM6ATMA1 Infineon Technologies

IPTG029N13NM6_Rev2.0_10-16-23.pdf Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 179µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+4.34 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPTG029N13NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V, Power Dissipation (Max): 3.8W (Ta), 294W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 179µA, Supplier Device Package: PG-HSOG-8-1, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 135 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V.

Weitere Produktangebote IPTG029N13NM6ATMA1 nach Preis ab 4.56 EUR bis 8.52 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPTG029N13NM6ATMA1 IPTG029N13NM6ATMA1 Hersteller : Infineon Technologies Infineon_03-12-2024_IPTG029N13NM6_Rev2.0.pdf MOSFETs TRENCH >=100V
auf Bestellung 1721 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.43 EUR
10+6.44 EUR
100+5.28 EUR
250+5.26 EUR
500+5.24 EUR
1000+4.79 EUR
1800+4.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPTG029N13NM6ATMA1 IPTG029N13NM6ATMA1 Hersteller : Infineon Technologies IPTG029N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 179µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.52 EUR
10+6.52 EUR
100+5.31 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPTG029N13NM6ATMA1 Hersteller : Infineon Technologies IPTG029N13NM6_Rev2.0_10-16-23.pdf TRENCH >=100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH