IPTG063N15NM5ATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 8.84 EUR |
| 10+ | 5.88 EUR |
| 100+ | 4.24 EUR |
| 500+ | 3.82 EUR |
| 1000+ | 3.52 EUR |
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Technische Details IPTG063N15NM5ATMA1 Infineon Technologies
Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Part Status: Active, Supplier Device Package: PG-HSOG-8, Power Dissipation (Max): 3.8W (Ta), 214W (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Gull Wing, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 4.6V @ 163µA.
Weitere Produktangebote IPTG063N15NM5ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IPTG063N15NM5ATMA1 | Infineon Technologies |
 Description: TRENCH >=100VInput Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: PG-HSOG-8 Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Gull Wing Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 4.6V @ 163µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPTG063N15NM5ATMA1 | Infineon Technologies |
Description: TRENCH >=100V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: PG-HSOG-8 Vgs(th) (Max) @ Id: 4.6V @ 163µA Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Gull Wing Packaging: Cut Tape (CT) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPTG063N15NM5ATMA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-HSOG-8
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4.6V @ 163µA
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-HSOG-8
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4.6V @ 163µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPTG063N15NM5ATMA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8
Vgs(th) (Max) @ Id: 4.6V @ 163µA
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
Part Status: Active
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8
Vgs(th) (Max) @ Id: 4.6V @ 163µA
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH