Weitere Produktangebote IPTG111N20NM3FDATMA1 nach Preis ab 5.58 EUR bis 12.95 EUR
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IPTG111N20NM3FDATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-HSOG-8Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 267µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V |
auf Bestellung 1726 Stücke: Lieferzeit 10-14 Tag (e) |
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IPTG111N20NM3FDATMA1 | Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 3144 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPTG111N20NM3FDATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
auf Bestellung 1726 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.74 EUR |
| 10+ | 8.65 EUR |
| 100+ | 6.34 EUR |
| 500+ | 5.58 EUR |
| IPTG111N20NM3FDATMA1 |
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Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
MOSFETs TRENCH >=100V
auf Bestellung 3144 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.95 EUR |
| 10+ | 9.24 EUR |
| 25+ | 9.22 EUR |
| 100+ | 7.23 EUR |



