IPU06N03LAGXK Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 40µA
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Power Dissipation (Max): 83W (Tc)
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Technische Details IPU06N03LAGXK Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3, Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: P-TO251-3-1, Vgs(th) (Max) @ Id: 2V @ 40µA, Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Power Dissipation (Max): 83W (Tc).