IPU60R1K0CEAKMA2 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - IPU60R1K0CEAKMA2 - IPU60R1K0 - 600V COOLMOS N-CHANNEL POWER
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
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Technische Details IPU60R1K0CEAKMA2 ROCHESTER ELECTRONICS
Description: MOSFET N-CH 600V 4.3A TO251-3, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO251-3, Vgs(th) (Max) @ Id: 3.5V @ 130µA, Power Dissipation (Max): 61W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Weitere Produktangebote IPU60R1K0CEAKMA2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPU60R1K0CEAKMA2 | Infineon Technologies |
Description: MOSFET N-CH 600V 4.3A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.5V @ 130µA Power Dissipation (Max): 61W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IPU60R1K0CEAKMA2 | Infineon Technologies |
MOSFET CONSUMER |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPU60R1K0CEAKMA2 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 4.3A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 61W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 600V 4.3A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 61W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPU60R1K0CEAKMA2 |
|
Hersteller: Infineon Technologies
MOSFET CONSUMER
MOSFET CONSUMER
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH