| Anzahl | Preis |
|---|---|
| 3+ | 1.33 EUR |
| 10+ | 0.56 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.39 EUR |
| 1500+ | 0.35 EUR |
| 4500+ | 0.3 EUR |
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Technische Details IPU60R1K5CEAKMA2 Infineon Technologies
Description: MOSFET N-CH 600V 3.1A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V, Power Dissipation (Max): 49W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Supplier Device Package: PG-TO251-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V.
Weitere Produktangebote IPU60R1K5CEAKMA2 nach Preis ab 0.45 EUR bis 1.46 EUR
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IPU60R1K5CEAKMA2 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 600V 3.1A TO251-3Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V Power Dissipation (Max): 49W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V |
auf Bestellung 844 Stücke: Lieferzeit 10-14 Tag (e) |
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