IPU80R1K0CEBKMA1 Infineon Technologies
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 600+ | 0.93 EUR |
| 1000+ | 0.85 EUR |
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Technische Details IPU80R1K0CEBKMA1 Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 250µA, Supplier Device Package: PG-TO251-3, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V.
Weitere Produktangebote IPU80R1K0CEBKMA1 nach Preis ab 0.77 EUR bis 1.08 EUR
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IPU80R1K0CEBKMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube |
auf Bestellung 1410 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R1K0CEBKMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 800V 5.7A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO251-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V |
auf Bestellung 1410 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU80R1K0CEBKMA1 | Hersteller : INFINEON TECHNOLOGIES |
IPU80R1K0CEBKMA1 THT N channel transistors |
auf Bestellung 914 Stücke: Lieferzeit 7-14 Tag (e) |
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| IPU80R1K0CEBKMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPU80R1K0CEBKMA1 - IPU80R1K0 - 800V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 1410 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R1K0CEBKMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 800V 5.7A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO251-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPU80R1K0CEBKMA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 800V 5.7A IPAK-3 |
Produkt ist nicht verfügbar |