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IPU80R1K2P7AKMA1

IPU80R1K2P7AKMA1 Infineon Technologies


Infineon-IPU80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c201e1f424685 Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
auf Bestellung 1425 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
502+0.93 EUR
Mindestbestellmenge: 502
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPU80R1K2P7AKMA1 Infineon Technologies

Description: MOSFET N-CH 800V 4.5A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 80µA, Supplier Device Package: PG-TO251-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V.

Weitere Produktangebote IPU80R1K2P7AKMA1 nach Preis ab 0.62 EUR bis 0.94 EUR

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IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 Hersteller : INFINEON TECHNOLOGIES IPU80R1K2P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 435 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
76+0.94 EUR
86+0.84 EUR
96+0.75 EUR
110+0.65 EUR
117+0.62 EUR
Mindestbestellmenge: 76
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IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 Hersteller : INFINEON TECHNOLOGIES IPU80R1K2P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
86+0.84 EUR
96+0.75 EUR
110+0.65 EUR
117+0.62 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 Hersteller : ROCHESTER ELECTRONICS INFN-S-A0004583981-1.pdf?t.download=true&u=5oefqw Description: ROCHESTER ELECTRONICS - IPU80R1K2P7AKMA1 - IPU80R1K2 - 800V COOLMOS N-CHANNEL POWER
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 1425 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R1K2P7AKMA1 Hersteller : Infineon Technologies infineon-ipu80r1k2p7-datasheet-v02_02-en.pdf 800V CoolMOS P7 Power Transistor
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IPU80R1K2P7AKMA1 Hersteller : Infineon Technologies infineon-ipu80r1k2p7-datasheet-v02_02-en.pdf Trans MOSFET N-CH 800V 4.5A 3-Pin(3+Tab) TO-251 Tube
Produkt ist nicht verfügbar
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IPU80R1K2P7AKMA1 Hersteller : Infineon Technologies infineon-ipu80r1k2p7-datasheet-v02_02-en.pdf Trans MOSFET N-CH 800V 4.5A 3-Pin(3+Tab) TO-251 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 Hersteller : Infineon Technologies Infineon-IPU80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c201e1f424685 Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 Hersteller : Infineon Technologies Infineon_IPU80R1K2P7_DataSheet_v02_02_EN-3362715.pdf MOSFET LOW POWER_NEW
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