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IPU80R1K4P7AKMA1

IPU80R1K4P7AKMA1 Infineon Technologies

INFN-S-A0002786355-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 119009 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
640+0.86 EUR
Mindestbestellmenge: 640 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPU80R1K4P7AKMA1 Infineon Technologies

Description: MOSFET N-CH 800V 4A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 700µA, Supplier Device Package: PG-TO251-3-21, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V.

Weitere Produktangebote IPU80R1K4P7AKMA1 nach Preis ab 0.86 EUR bis 2.59 EUR

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IPU80R1K4P7AKMA1 IPU80R1K4P7AKMA1 Infineon Technologies infineon-ipu80r1k4p7-datasheet-v02_02-en.pdf Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-251 Tube
auf Bestellung 22500 Stücke:
Lieferzeit 14-21 Tag (e)
1500+0.86 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R1K4P7AKMA1 IPU80R1K4P7AKMA1 Infineon Technologies infineon-ipu80r1k4p7-datasheet-v02_02-en.pdf Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-251 Tube
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
105+1.65 EUR
124+1.39 EUR
145+1.17 EUR
200+1.08 EUR
500+1 EUR
1000+0.92 EUR
1500+0.89 EUR
Mindestbestellmenge: 105 Stücke
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IPU80R1K4P7AKMA1 IPU80R1K4P7AKMA1 Infineon Technologies Infineon_IPU80R1K4P7_DataSheet_v02_02_EN.pdf MOSFETs LOW POWER_NEW
auf Bestellung 1318 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.59 EUR
10+2.07 EUR
100+2.03 EUR
500+1.59 EUR
1000+1.37 EUR
1500+1.12 EUR
4500+1.06 EUR
Mindestbestellmenge: 2 Stücke
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IPU80R1K4P7AKMA1 IPU80R1K4P7AKMA1 Infineon Technologies INFN-S-A0002786355-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R1K4P7AKMA1 infineon-ipu80r1k4p7-datasheet-v02_02-en.pdf
IPU80R1K4P7AKMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-251 Tube
auf Bestellung 22500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1500+0.86 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R1K4P7AKMA1 infineon-ipu80r1k4p7-datasheet-v02_02-en.pdf
IPU80R1K4P7AKMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-251 Tube
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
105+1.65 EUR
124+1.39 EUR
145+1.17 EUR
200+1.08 EUR
500+1 EUR
1000+0.92 EUR
1500+0.89 EUR
Mindestbestellmenge: 105 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R1K4P7AKMA1 Infineon_IPU80R1K4P7_DataSheet_v02_02_EN.pdf
IPU80R1K4P7AKMA1
Hersteller: Infineon Technologies
MOSFETs LOW POWER_NEW
auf Bestellung 1318 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.59 EUR
10+2.07 EUR
100+2.03 EUR
500+1.59 EUR
1000+1.37 EUR
1500+1.12 EUR
4500+1.06 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R1K4P7AKMA1 INFN-S-A0002786355-1.pdf?t.download=true&u=5oefqw
IPU80R1K4P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH