IPU80R4K5P7AKMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 185+ | 0.94 EUR |
| 216+ | 0.8 EUR |
| 228+ | 0.74 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.62 EUR |
| 1500+ | 0.61 EUR |
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Technische Details IPU80R4K5P7AKMA1 Infineon Technologies
Description: MOSFET N-CH 800V 1.5A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V, Power Dissipation (Max): 13W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 200µA, Supplier Device Package: PG-TO251-3-21, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V.
Weitere Produktangebote IPU80R4K5P7AKMA1 nach Preis ab 0.46 EUR bis 2.09 EUR
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IPU80R4K5P7AKMA1 | Infineon Technologies |
 Description: MOSFET N-CH 800V 1.5A TO251-3Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Power Dissipation (Max): 13W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 200µA Supplier Device Package: PG-TO251-3-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V |
auf Bestellung 1514 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU80R4K5P7AKMA1 | Infineon Technologies |
MOSFETs LOW POWER_NEW |
auf Bestellung 2981 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPU80R4K5P7AKMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
Description: MOSFET N-CH 800V 1.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 1514 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.07 EUR |
| 75+ | 0.89 EUR |
| 150+ | 0.79 EUR |
| 525+ | 0.64 EUR |
| 1050+ | 0.58 EUR |
| IPU80R4K5P7AKMA1 |
|
Hersteller: Infineon Technologies
MOSFETs LOW POWER_NEW
MOSFETs LOW POWER_NEW
auf Bestellung 2981 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.09 EUR |
| 10+ | 1.12 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.6 EUR |
| 1500+ | 0.49 EUR |
| 10500+ | 0.46 EUR |