IPU80R600P7AKMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
auf Bestellung 1456 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.57 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.44 EUR |
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Technische Details IPU80R600P7AKMA1 Infineon Technologies
Description: MOSFET N-CH 800V 8A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 170µA, Supplier Device Package: PG-TO251-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V.
Weitere Produktangebote IPU80R600P7AKMA1 nach Preis ab 2.86 EUR bis 11.91 EUR
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IPU80R600P7AKMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; IPAK; ESD Mounting: THT Polarisation: unipolar Gate charge: 20nC On-state resistance: 0.6Ω Drain current: 5.5A Power dissipation: 60W Gate-source voltage: ±20V Drain-source voltage: 800V Technology: CoolMOS™ P7 Kind of channel: enhancement Version: ESD Case: IPAK Type of transistor: N-MOSFET Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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IPU80R600P7AKMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; IPAK; ESD Mounting: THT Polarisation: unipolar Gate charge: 20nC On-state resistance: 0.6Ω Drain current: 5.5A Power dissipation: 60W Gate-source voltage: ±20V Drain-source voltage: 800V Technology: CoolMOS™ P7 Kind of channel: enhancement Version: ESD Case: IPAK Type of transistor: N-MOSFET Kind of package: tube |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R600P7AKMA1 | Hersteller : Infineon Technologies |
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IPU80R600P7AKMA1 | Hersteller : Infineon Technologies |
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IPU80R600P7AKMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-251 Tube |
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IPU80R600P7AKMA1 | Hersteller : Infineon Technologies |
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