IPU95R2K0P7AKMA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; IPAK
Type of transistor: N-MOSFET
Case: IPAK
Mounting: THT
Power dissipation: 37W
Technology: CoolMOS™ P7
Features of semiconductor devices: ESD protected gate
Kind of package: tube
Gate charge: 10nC
Polarisation: unipolar
Drain current: 2.4A
Kind of channel: enhanced
Drain-source voltage: 950V
On-state resistance: 2Ω
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1271 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 74+ | 0.97 EUR |
| 100+ | 0.72 EUR |
| 107+ | 0.67 EUR |
| 109+ | 0.66 EUR |
| 114+ | 0.63 EUR |
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Technische Details IPU95R2K0P7AKMA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 950V 4A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 80µA, Supplier Device Package: PG-TO251-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V.
Weitere Produktangebote IPU95R2K0P7AKMA1 nach Preis ab 0.63 EUR bis 2.39 EUR
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IPU95R2K0P7AKMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; IPAK Type of transistor: N-MOSFET Case: IPAK Mounting: THT Power dissipation: 37W Technology: CoolMOS™ P7 Features of semiconductor devices: ESD protected gate Kind of package: tube Gate charge: 10nC Polarisation: unipolar Drain current: 2.4A Kind of channel: enhanced Drain-source voltage: 950V On-state resistance: 2Ω Gate-source voltage: ±20V |
auf Bestellung 1271 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU95R2K0P7AKMA1 | Hersteller : Infineon Technologies |
MOSFET LOW POWER_NEW |
auf Bestellung 3000 Stücke: Lieferzeit 610-614 Tag (e) |
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IPU95R2K0P7AKMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 950V 4A 3-Pin(3+Tab) TO-251 Tube |
Produkt ist nicht verfügbar |
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IPU95R2K0P7AKMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 950V 4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 80µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V |
Produkt ist nicht verfügbar |