IPW50R280CEFKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO247-3
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 92W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Obsolete
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Technische Details IPW50R280CEFKSA1 Infineon Technologies
Description: MOSFET N-CH 500V 13A TO247-3, Supplier Device Package: PG-TO247-3-1, Vgs(th) (Max) @ Id: 3.5V @ 350µA, Power Dissipation (Max): 92W (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 13V, Part Status: Obsolete.

