IPW60R031CFD7 INFINEON TECHNOLOGIES
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 15.02 EUR |
| 6+ | 12.50 EUR |
| 7+ | 11.83 EUR |
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Technische Details IPW60R031CFD7 INFINEON TECHNOLOGIES
Description: 600V COOLMOS N-CHANNEL POWER MOS, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.63mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V.
Weitere Produktangebote IPW60R031CFD7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| IPW60R031CFD7 | Hersteller : Infineon Technologies |
Description: 600V COOLMOS N-CHANNEL POWER MOS Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.63mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V |
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IPW60R031CFD7 | Hersteller : Infineon Technologies |
 MOSFETs HIGH POWER_NEW |
Produkt ist nicht verfügbar |