IPW60R031CFD7

IPW60R031CFD7 INFINEON TECHNOLOGIES


pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7D78568F074A&compId=IPW60R031CFD7.pdf?ci_sign=c11ed890a1b18706da62222855c2df1e6b231937 Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.51 EUR
7+11.84 EUR
30+11.38 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPW60R031CFD7 INFINEON TECHNOLOGIES

Description: 600V COOLMOS N-CHANNEL POWER MOS, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.63mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V.

Weitere Produktangebote IPW60R031CFD7 nach Preis ab 11.84 EUR bis 12.51 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPW60R031CFD7 IPW60R031CFD7 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7D78568F074A&compId=IPW60R031CFD7.pdf?ci_sign=c11ed890a1b18706da62222855c2df1e6b231937 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.51 EUR
7+11.84 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R031CFD7 Hersteller : Infineon Technologies Description: 600V COOLMOS N-CHANNEL POWER MOS
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
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IPW60R031CFD7 IPW60R031CFD7 Hersteller : Infineon Technologies Infineon_IPW60R031CFD7_DS_v02_01_EN-1731944.pdf MOSFETs HIGH POWER_NEW
Produkt ist nicht verfügbar
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