IPW60R031CFD7 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
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Technische Details IPW60R031CFD7 INFINEON TECHNOLOGIES
Description: 600V COOLMOS N-CHANNEL POWER MOS, Package / Case: TO-247-3, Packaging: Bulk, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO247-3, Vgs(th) (Max) @ Id: 4.5V @ 1.63mA, Power Dissipation (Max): 278W (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V.
Weitere Produktangebote IPW60R031CFD7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IPW60R031CFD7 | Infineon Technologies |
Description: 600V COOLMOS N-CHANNEL POWER MOS Package / Case: TO-247-3 Packaging: Bulk Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 4.5V @ 1.63mA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Drain to Source Voltage (Vdss): 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IPW60R031CFD7 | Infineon Technologies |
MOSFETs HIGH POWER_NEW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPW60R031CFD7 |
Hersteller: Infineon Technologies
Description: 600V COOLMOS N-CHANNEL POWER MOS
Package / Case: TO-247-3
Packaging: Bulk
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Description: 600V COOLMOS N-CHANNEL POWER MOS
Package / Case: TO-247-3
Packaging: Bulk
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPW60R031CFD7 |
|
Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH