IPW60R070CFD7

IPW60R070CFD7 INFINEON TECHNOLOGIES


IPW60R070CFD7.pdf Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details IPW60R070CFD7 INFINEON TECHNOLOGIES

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3, Type of transistor: N-MOSFET, Technology: OptiMOS™, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 20A, Power dissipation: 156W, Case: PG-TO247-3, Gate-source voltage: ±20V, On-state resistance: 0.129Ω, Mounting: THT, Gate charge: 67nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.

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IPW60R070CFD7 IPW60R070CFD7 Hersteller : Infineon Technologies Infineon_IPW60R070CFD7_DS_v02_01_EN-1732073.pdf MOSFET HIGH POWER_NEW
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IPW60R070CFD7 IPW60R070CFD7 Hersteller : INFINEON TECHNOLOGIES IPW60R070CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar