IPW60R070CFD7 Infineon Technologies

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3, Type of transistor: N-MOSFET, On-state resistance: 0.129Ω, Mounting: THT, Power dissipation: 156W, Gate charge: 67nC, Polarisation: unipolar, Technology: OptiMOS™, Drain current: 20A, Kind of channel: enhancement, Drain-source voltage: 600V, Gate-source voltage: ±20V, Kind of package: tube, Case: PG-TO247-3.