IPW60R070CFD7 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details IPW60R070CFD7 INFINEON TECHNOLOGIES
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3, Type of transistor: N-MOSFET, Technology: OptiMOS™, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 20A, Power dissipation: 156W, Case: PG-TO247-3, Gate-source voltage: ±20V, On-state resistance: 0.129Ω, Mounting: THT, Gate charge: 67nC, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPW60R070CFD7
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IPW60R070CFD7 | Hersteller : Infineon Technologies |
MOSFET HIGH POWER_NEW |
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IPW60R070CFD7 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 156W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.129Ω Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |