IPW60R070P6 Infineon Technologies
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 9.80 EUR |
| 25+ | 9.05 EUR |
| 50+ | 8.38 EUR |
| 100+ | 7.78 EUR |
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Technische Details IPW60R070P6 Infineon Technologies
Description: 600V, 0.07OHM, N-CHANNEL MOSFET,, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V, Power Dissipation (Max): 391W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.72mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V.
Weitere Produktangebote IPW60R070P6 nach Preis ab 7.09 EUR bis 12.51 EUR
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IPW60R070P6 | Hersteller : Infineon Technologies |
 MOSFETs HIGH POWER PRICE/PERFORM |
auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPW60R070P6 | Hersteller : Infineon technologies |
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auf Bestellung 41 Stücke: Lieferzeit 21-28 Tag (e) |
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| IPW60R070P6 | Hersteller : Infineon Technologies |
Description: 600V, 0.07OHM, N-CHANNEL MOSFET, Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V Power Dissipation (Max): 391W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.72mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V |
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