 
IPW60R120P7 Infineon Technologies
 Hersteller: Infineon Technologies
                                                Hersteller: Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
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Technische Details IPW60R120P7 Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V, Power Dissipation (Max): 95W (Tc), Vgs(th) (Max) @ Id: 4V @ 410µA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V. 
Weitere Produktangebote IPW60R120P7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | 
|---|---|---|---|---|---|
|   | IPW60R120P7 | Hersteller : Infineon Technologies |  MOSFETs HIGH POWER_NEW | Produkt ist nicht verfügbar | |
|   | IPW60R120P7 | Hersteller : INFINEON TECHNOLOGIES |  Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO247-3; ESD Type of transistor: N-MOSFET Version: ESD Case: PG-TO247-3 Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 0.12Ω Drain current: 16A Gate-source voltage: ±20V Power dissipation: 95W Technology: CoolMOS™ P7 Drain-source voltage: 600V Kind of channel: enhancement | Produkt ist nicht verfügbar |