IPW60R170CFD7 Infineon Technologies

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3, Type of transistor: N-MOSFET, Technology: OptiMOS™, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 9A, Power dissipation: 75W, Case: PG-TO247-3, Gate-source voltage: ±20V, On-state resistance: 0.325Ω, Mounting: THT, Gate charge: 28nC, Kind of package: tube, Kind of channel: enhancement.