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Technische Details IPW60R170CFD7 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3, Type of transistor: N-MOSFET, Technology: OptiMOS™, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 9A, Power dissipation: 75W, Case: PG-TO247-3, Gate-source voltage: ±20V, On-state resistance: 0.325Ω, Mounting: THT, Gate charge: 28nC, Kind of package: tube, Kind of channel: enhancement.
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IPW60R170CFD7 | Hersteller : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 75W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.325Ω Mounting: THT Gate charge: 28nC Kind of package: tube Kind of channel: enhancement |
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