IPW60R190C6FKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 221 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 4.06 EUR |
| 20+ | 3.59 EUR |
| 24+ | 3.10 EUR |
| 25+ | 2.93 EUR |
| 120+ | 2.89 EUR |
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Technische Details IPW60R190C6FKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 600V 20.2A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V, Power Dissipation (Max): 151W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 630µA, Supplier Device Package: PG-TO247-3-1, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V.
Weitere Produktangebote IPW60R190C6FKSA1 nach Preis ab 2.44 EUR bis 7.23 EUR
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IPW60R190C6FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 221 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R190C6FKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 560 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R190C6FKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 20.2A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 630µA Supplier Device Package: PG-TO247-3-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V |
auf Bestellung 326 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R190C6FKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 560 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R190C6FKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 260 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R190C6FKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPW60R190C6FKSA1 - IPW60R190 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R190C6FKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IPW60R190C6FKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IPW60R190C6FKSA1 | Hersteller : Infineon Technologies |
MOSFET HIGH POWER_LEGACY |
Produkt ist nicht verfügbar |