IPW60R190C6FKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.14 EUR |
| 18+ | 4.83 EUR |
| 22+ | 4 EUR |
| 30+ | 3.51 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPW60R190C6FKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 600V 20.2A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V, Power Dissipation (Max): 151W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 630µA, Supplier Device Package: PG-TO247-3-1, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V.
Weitere Produktangebote IPW60R190C6FKSA1 nach Preis ab 3.07 EUR bis 9.72 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IPW60R190C6FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 20.2A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 630µA Supplier Device Package: PG-TO247-3-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V |
auf Bestellung 1659 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R190C6FKSA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R190C6FKSA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
|
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IPW60R190C6FKSA1 | ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPW60R190C6FKSA1 - IPW60R190 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 54 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPW60R190C6FKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Description: MOSFET N-CH 600V 20.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
auf Bestellung 1659 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.59 EUR |
| 30+ | 4.76 EUR |
| 120+ | 3.92 EUR |
| 510+ | 3.3 EUR |
| 1020+ | 3.07 EUR |
| IPW60R190C6FKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.7 EUR |
| 33+ | 5.33 EUR |
| 120+ | 4.27 EUR |
| IPW60R190C6FKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.72 EUR |
| 33+ | 5.24 EUR |
| 120+ | 4.12 EUR |
| IPW60R190C6FKSA1 |
|
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - IPW60R190C6FKSA1 - IPW60R190 - 600V COOLMOS N-CHANNEL POWER
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - IPW60R190C6FKSA1 - IPW60R190 - 600V COOLMOS N-CHANNEL POWER
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)