IPW60R199CP Infineon Technologies
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.23 EUR |
| 10+ | 4.88 EUR |
| 100+ | 3.94 EUR |
| 480+ | 3.52 EUR |
| 1200+ | 2.99 EUR |
| 2640+ | 2.83 EUR |
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Technische Details IPW60R199CP Infineon Technologies
Description: 16A, 600V, 0.199OHM, N-CHANNEL M, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 660µA, Supplier Device Package: PG-TO247-3-21, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V.
Weitere Produktangebote IPW60R199CP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IPW60R199CP | Hersteller : Infineon Technologies |
 Description: 16A, 600V, 0.199OHM, N-CHANNEL MPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 660µA Supplier Device Package: PG-TO247-3-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V |
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