
IPW60R280P6FKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
4+ | 4.51 EUR |
30+ | 2.55 EUR |
120+ | 2.31 EUR |
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Technische Details IPW60R280P6FKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 430µA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V.
Weitere Produktangebote IPW60R280P6FKSA1 nach Preis ab 2.06 EUR bis 4.96 EUR
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IPW60R280P6FKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R280P6FKSA1 | Hersteller : Infineon Technologies |
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IPW60R280P6FKSA1 | Hersteller : Infineon Technologies |
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IPW60R280P6FKSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IPW60R280P6FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 104W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 60 Stücke |
Produkt ist nicht verfügbar |
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IPW60R280P6FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 104W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |