IPW65R019C7 Infineon Technologies
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 35.25 EUR |
| 10+ | 31.33 EUR |
| 25+ | 29.23 EUR |
| 50+ | 28.32 EUR |
| 100+ | 27.4 EUR |
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Technische Details IPW65R019C7 Infineon Technologies
Description: 75A, 650V, 0.019OHM, N-CHANNEL M, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 58.3A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.92mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V.
Weitere Produktangebote IPW65R019C7 nach Preis ab 30.93 EUR bis 43.26 EUR
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IPW65R019C7 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 700V 75A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPW65R019C7 | Hersteller : Infineon |
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auf Bestellung 2320 Stücke: Lieferzeit 21-28 Tag (e) |
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| IPW65R019C7 | Hersteller : Infineon technologies |
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auf Bestellung 239 Stücke: Lieferzeit 21-28 Tag (e) |
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IPW65R019C7 | Hersteller : Infineon Technologies |
Description: 75A, 650V, 0.019OHM, N-CHANNEL M Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 58.3A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.92mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V |
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