IPW65R041CFDFKSA1 Infineon Technologies
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 33+ | 16.69 EUR |
| 100+ | 15.29 EUR |
| 500+ | 13.95 EUR |
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Technische Details IPW65R041CFDFKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 68.5A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68.5A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 33.1A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3.3mA, Supplier Device Package: PG-TO247-3-1, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 100 V.
Weitere Produktangebote IPW65R041CFDFKSA1 nach Preis ab 12.66 EUR bis 16.69 EUR
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IPW65R041CFDFKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 650V 68.5A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 1440 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R041CFDFKSA1 | Hersteller : INFINEON |
Description: INFINEON - IPW65R041CFDFKSA1 - Leistungs-MOSFET, n-Kanal, 700 V, 68.5 A, 0.037 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 700V rohsCompliant: YES Dauer-Drainstrom Id: 68.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 500W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.037ohm |
auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R041CFDFKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 68.5A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPW65R041CFDFKSA1 | Hersteller : International Rectifier HiRel Products |
Trans MOSFET N-CH 650V 68.5A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R041CFDFKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 700V 68.5A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IPW65R041CFDFKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 68.5A Power dissipation: 500W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW65R041CFDFKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 68.5A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68.5A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 33.1A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.3mA Supplier Device Package: PG-TO247-3-1 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPW65R041CFDFKSA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 700V 68.5A TO247-3 CoolMOS CFD2 |
Produkt ist nicht verfügbar |
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IPW65R041CFDFKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 68.5A Power dissipation: 500W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |