IPW65R045C7 Infineon Technologies
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 17.42 EUR |
| 10+ | 14.92 EUR |
| 100+ | 12.44 EUR |
| 240+ | 11.72 EUR |
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Technische Details IPW65R045C7 Infineon Technologies
Description: 46A, 650V, 0.045OHM, N-CHANNEL M, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.25mA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V.
Weitere Produktangebote IPW65R045C7 nach Preis ab 17.37 EUR bis 23.89 EUR
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IPW65R045C7 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPW65R045C7 | Hersteller : Infineon technologies |
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auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
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IPW65R045C7 | Hersteller : Infineon Technologies |
Description: 46A, 650V, 0.045OHM, N-CHANNEL M Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.25mA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V |
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